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document number: 94422 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 19-jul-10 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 1 fast thyristor/diode and thyristor/thyristor (magn-a-pak power modules), 200 a vsk.f200..p series vishay semiconductors features ? fast turn-off thyristor ? fast recovery diode ? high surge capability ? electrically isolated baseplate ? 3500 v rms isolating voltage ? industrial standard package ? ul approved file e78996 ? compliant to rohs directive 2002/95/ec ? designed and qualified for industrial level description this series of magn-a-pak modules are intended for applications such as self -commutated inverters, dc choppers, electronic welders, induction heating and others where fast switching characteristics are required. electrical specifications product summary i t(av) 200 a type modules - thyristor, fast ma g n-a-pak major ratings and characteristics symbol characteristics values units i t(av) 200 a t c 85 c i t(rms) 444 a i tsm 50 hz 7600 60 hz 8000 i 2 t 50 hz 290 ka 2 s 60 hz 265 i 2 ? t 2900 ka 2 ? s t q 20/25 s t rr 2 v drm /v rrm 800/1200 v t j range - 40 to 125 c voltage ratings type number voltage code v rrm /v drm , maximum repetitive peak reverse and off-state blocking voltage v v rsm , maximum non-repetitive peak reverse voltage v i rrm /i drm at t j = 125 c ma vsk.f200- 08 800 800 50 12 1200 1200
www.vishay.com for technical qu estions within your region, please contact one of the fo llowing: document number: 94422 2 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com revision: 19-jul-10 vsk.f200..p series vishay semiconductors fast thyristor/diode an d thyristor/thyristor (magn-a-pak power modules), 200 a current carrying capability frequency units 50 hz 380 560 630 850 2460 3180 a 400 hz 460 690 710 1060 1570 2080 2500 hz 310 450 530 760 630 860 5000 hz 250 360 410 560 410 560 10 000 hz 180 280 300 410 - - recovery voltage v r 50 50 50 50 50 50 v voltage before turn-on v d 80 % v drm 80 % v drm 80 % v drm rise of on-state curr ent di/dt 50 50 - - - - a/s case temperature 856085608560c equivalent values for rc circuit 10/0.47 10/0.47 10/0.47 ? /f on-state conduction parameter symbol test conditions values units maximum average on-state current at case temperature i t(av) 180 conduction, half sine wave 200 a 85 c maximum rms on-state current i t(rms) as ac switch 444 a maximum peak, one-cycle non-repetitive on-state, surge current i tsm t = 10 ms no voltage reapplied sinusoidal half wave, initial t j = 125 c 7600 t = 8.3 ms 8000 t = 10 ms 100 % v rrm reapplied 6400 t = 8.3 ms 6700 maximum i 2 t for fusing i 2 t t = 10 ms no voltage reapplied 290 ka 2 s t = 8.3 ms 265 t = 10 ms 100 % v rrm reapplied 205 t = 8.3 ms 187 maximum i 2 ? t for fusing i 2 ? t t = 0.1 ms to 10 ms, no voltage reapplied 2900 ka 2 ? s low level value or threshold voltage v t(to)1 (16.7 % x ? x i t(av) < i < ? x i t(av) ), t j = t j maximum 1.18 v high level value of threshold voltage v t(to)2 (i > ? x i t(av) < i < ? x i t(av) ), t j = t j maximum 1.25 low level value on-state slope resistance r t1 (16.7 % x ? x i t(av) < i < ? x i t(av) ), t j = t j maximum 0.74 m ? high level value on-state slope resistance r t2 (i > ? x i t(av) < i < ? x i t(av) ), t j = t j maximum 0.70 maximum on-state voltage drop v tm i pk = 600 a, t j = t j maximum, t p = 10 ms sine pulse 1.73 v maximum holding current i h t j = 25 c, i t > 30 a 600 ma maximum latching current i l t j = 25 c, v a = 12 v, ra = 6 ? , i g = 1a 1000 180 el i tm 180 el i tm 100 s i tm
document number: 94422 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 19-jul-10 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 3 vsk.f200..p series fast thyristor/diode an d thyristor/thyristor (magn-a-pak power modules), 200 a vishay semiconductors switching parameter symbol test conditions values units kj maximum non-repetitive rate of rise di/dt gate drive 20 v, 20 ? , t r ? 1 ms, v d = 80 % v drm , t j = 25 c 800 a/s maximum recovery time t rr i tm = 350 a, di/dt = - 25 a/s, v r = 50 v, t j = 25 c 2 s maximum turn-off time t q i tm = 750 a; t j = t j maximum; di/dt = - 25 a/s; v r = 50 v; dv/dt = 400 v/s linear to 80 % v drm 20 25 blocking parameter symbol test conditions values units maximum critical rate of rise of off-state voltage dv/dt t j = 125 c, exponential to 67 % v drm 1000 v/s rms insulation voltage v ins 50 hz, circuit to base, t j = 25 c, t = 1 s 3000 v maximum peak reverse and off-state leakage current i rrm , i drm t j = 125 c, rated v drm /v rrm applied 50 ma triggering parameter symbol test conditions values units maximum peak gate power p gm f = 50 hz, d% = 50 60 w maximum peak average gate power p g(av) t j = 125 c, f = 50 hz, d% = 50 10 maximum peak positi ve gate current i gm t j = 125 c, t p ? 5 ms 10 a maximum peak negati ve gate voltage -v gt 5v maximum dc gate curren t required to trigger i gt t j = 25 c, v ak 12 v, ra = 6 200 ma dc gate voltage required to trigger v gt 3v dc gate current not to trigger i gd t j = 125 c, rated v drm applied 20 ma dc gate voltage not to trigger v gd 0.25 v thermal and mechanical specifications parameter symbol test conditions values units maximum junction operating temperature range t j - 40 to 125 c storage temperature range t stg - 40 to 150 maximum thermal resistance, junction to ca se per junction r thjc dc operation 0.125 k/w maximum thermal resistance, case to heatsink per module r thc-hs mounting surface flat, smooth and greased 0.025 mounting torque 10 % map to heatsink a mounting compound is recommended. the torque should be rechecked after a period of 3 hours to allow for the spread of the compound. use of cable lugs is not recommen ded, busbar should be used and restrained during tightening. threads must be lubricated with a compound. 4 to 6 (35 to 53) n m (lbf in) busbar to map approximate weight 500 g 17.8 oz. case style magn-a-pak
www.vishay.com for technical qu estions within your region, please contact one of the fo llowing: document number: 94422 4 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com revision: 19-jul-10 vsk.f200..p series vishay semiconductors fast thyristor/diode an d thyristor/thyristor (magn-a-pak power modules), 200 a note ? table shows the increment of thermal resistance r thjc when devices operate at different conduction angles than dc fig. 1 - current ratings characteristics fig. 2 - current ratings characteristics fig. 3 - on-state po wer loss characteristics fig. 4 - on-state po wer loss characteristics ? r thjc conduction conductions angle sinusoidal conduction rectangular conduction units 180 0.009 0.006 k/w 120 0.10 0.011 90 0.014 0.015 60 0.020 0.020 30 0.32 0.033 60 70 80 90 100 110 120 130 0 40 80 120 160 200 240 30 60 90 120 180 average on-state current (a) maximum allowable case temperature (c) conduc tion angle vsk.f200.. serie s r ( d c ) = 0 . 1 2 5 k/ w thjc 60 70 80 90 100 110 120 130 0 50 100 150 200 250 300 350 dc 30 60 90 120 180 average on-state current (a) maximum allowable case temperature (c) conduction period vsk.f200.. serie s r (dc) = 0.125 k/ w thjc 0 50 100 150 200 250 300 350 0 40 80 120 160 200 rm s li m i t conduction angle maximum average on-state power loss (w) average on-state current (a) 180 120 90 60 30 vsk.f200.. series pe r ju n c t io n t = 1 2 5 c j 0 50 100 150 200 250 300 350 400 450 500 0 50 100 150 200 250 300 350 dc 180 120 90 60 30 rm s li m i t conduction period maximum average on-state power loss (w) average on-state current (a) vsk.f200.. se ries pe r ju n c t i o n t = 1 2 5 c j
document number: 94422 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 19-jul-10 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 5 vsk.f200..p series fast thyristor/diode an d thyristor/thyristor (magn-a-pak power modules), 200 a vishay semiconductors fig. 5 - maximum non- repetitive surge current fig. 6 - maximum non- repetitive surge current fig. 7 - on-state voltage drop characteristics fig. 8 - thermal impedance z thjc characteristics fig. 9 - reverse recovery charge characteristics fig. 10 - reverse recovery current characteristics 3000 4000 5000 6000 7000 110100 number of equal amplitude half cycle current pulses (n) peak half sine wave on-state current (a) vsk.f200.. series pe r ju n c t io n initia l t = 125c @ 6 0 hz 0 . 0 0 8 3 s @ 5 0 hz 0 . 0 1 0 0 s at any rated load condition and with rated v ap plied following surge. rrm j 3000 4000 5000 6000 7000 8000 0.01 0.1 1 peak half sine wave on-state current (a) pu lse tra i n d ura t i o n ( s) ma ximum non rep etitive surge current versus pulse train duration. control of conduc tion ma y not be ma inta ined. vsk.f200.. series pe r ju n c t i o n init ia l t = 125c no vo lta g e reap plie d ra t e d v re a p p l i e d rrm j 100 1000 10000 1234567 t = 2 5 c j instantaneous on-state current (a) inst a nt a ne o us on-st a t e vo lt a g e (v) vsk.f200.. se rie s pe r ju n c t io n t = 1 2 5 c j 0.001 0.01 0.1 1 0.001 0.01 0.1 1 10 100 sq u a r e w a v e pu l se d u r a t i o n ( s) thjc transient thermal impedanc e z (k/ w) steady state value: r = 0.125 k/ w (dc operation) vsk.f200.. series pe r ju n c t i o n thjc 80 100 120 140 160 180 200 220 240 260 280 300 320 10 20 30 40 50 60 70 80 90 100 300 a 200 a 100 a 500 a maximum reverse recovery charge - qrr (c) rate of fall of forward current - di/ dt (a/ s) i = 1000 a vsk.f200.. se rie s t = 1 2 5 c tm j 30 60 90 120 150 180 10 20 30 40 50 60 70 80 90 100 500a 300a 200a 100a maximum re verse re c overy current - irr (a) rate of fall of forward current - di/dt (a/s) vsk.f200.. series t = 1 2 5 c i = 1000a j tm
www.vishay.com for technical qu estions within your region, please contact one of the fo llowing: document number: 94422 6 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com revision: 19-jul-10 vsk.f200..p series vishay semiconductors fast thyristor/diode an d thyristor/thyristor (magn-a-pak power modules), 200 a fig. 11 - frequency characteristics fig. 12 - frequency characteristics fig. 13 - frequency characteristics 1e1 1e2 1e3 1e4 1e1 1e2 1e3 1e4 50 hz 400 1000 5000 150 2500 peak on-stata current (a) pu lse ba se w i d t h ( s) vsk.f200.. series sinusoidal pulse t = 8 5 c sn u b b e r c i r c u i t r = 1 0 o h m s c = 0.47 f v = 80% v tp 1e4 drm c s s d 1 e1 1 e2 1 e3 1e4 50 hz 400 1000 5000 150 2500 pu lse ba se w id t h ( s) snub b er c irc uit r = 1 0 o h m s c = 0.47 f v = 80% v vsk.f200.. series si n u so i d a l p u l se t = 6 0 c tp 1e1 c drm s s d 1e2 1e3 1e4 1 e1 1 e2 1 e3 1 e4 50 hz 400 1000 5000 150 2500 pu lse ba se w i d t h ( s) pea k on-state current (a) vsk.f200.. series tr a p e z o i d a l p u l s e t = 8 5 c d i / d t 5 0 a / s sn u b b e r c i r c u i t r = 1 0 o h m s c = 0.47 f v = 80% v 1e4 tp drm c s s d e1 1 e2 1 e3 1e4 50 hz 400 1000 5000 150 2500 pu lse ba se w id t h ( s) sn u b b e r c i r c u i t r = 1 0 o h m s c = 0.47 f v = 80% v vsk.f200.. se ries trapezoidal pulse t = 8 5 c d i / d t 1 0 0 a / s 1e1 tp drm s s d c 1e2 1e3 1e4 1e1 1e2 1e3 1e4 50 hz 400 1000 5000 150 2500 peak on-state current (a) pu l se ba se w i d t h ( s) sn u b b e r c i r c u i t r = 1 0 o h m s c = 0.47 f v = 80% v vsk.f200.. se rie s trapezoidal pulse t = 6 0 c d i / d t 5 0 a / s 1e4 tp drm c s s d e1 1e2 1 e3 1e4 50 hz 400 1000 5000 150 2500 pu l se ba se w i d t h ( s) vsk.f200.. series tr a p e z o i d a l p u l se t = 60c d i/ d t 100a/ s snub b e r c irc uit r = 1 0 o h m s c = 0.47 f v = 80% v 1e1 tp drm c s s d
document number: 94422 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 19-jul-10 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 7 vsk.f200..p series fast thyristor/diode an d thyristor/thyristor (magn-a-pak power modules), 200 a vishay semiconductors fig. 14 - maximum on-state ener gy power loss characteristics fig. 15 - gate characteristics 1e1 1e2 1e3 1e4 1e11e21e31e4 10 joules p er p ulse 5 2.5 1 0.5 0.25 0.1 0.05 peak on-state current (a) pu lse ba se w i d t h ( s) vsk.f200.. se ries si n u so i d a l p u l se tp 1e4 e1 1 e2 1 e3 1 e4 10 joules p er p ulse 5 2.5 1 0.5 0.25 0.1 0.05 pu lse ba se w i d t h ( s) vsk.f200.. series trapezoidal pulse di/dt 50a/s tp 1e1 0.1 1 10 100 0.01 0.1 1 10 100 vgd igd (b) (a) t j=25 c tj = 1 2 5 c tj= - 4 0 c (2) (3) in st a n t a n e o u s g a t e c u r r e n t ( a ) inst a nt a ne o us ga t e vo lt a g e (v) a) recommended load line for b) recommended load line for rectangular gate pulse rated di/dt : 10v, 10ohms <=30% rated di/dt : 10v, 20ohms vsk.f200.. series frequency limited by pg(av) (1) pgm = 8w, tp = 25ms (2) pgm = 20w, tp = 1ms (3) pgm = 40w, tp = 5ms (4) pgm = 80w, tp = 2.5ms (1) (4)
www.vishay.com for technical qu estions within your region, please contact one of the fo llowing: document number: 94422 8 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com revision: 19-jul-10 vsk.f200..p series vishay semiconductors fast thyristor/diode an d thyristor/thyristor (magn-a-pak power modules), 200 a ordering information table note ? to order the optional hardware go to www.vishay.com/doc?95172 circuit configuration circuit description circuit configuration code circuit drawing two scrs common cathodes u scr/diode common cathodes k two scrs common anodes v 1 - module type 2 - circuit configuration (see circuit configuration table) 3 - fast scr 5 - voltage code x 100 = v rrm (see voltage ratings table) 8 - lead (pb)-free 4 - current rating: i t(av) x 10 rounded 6 - dv/dt code: h 400 v/s 7 -t q code: k 20 s j 25 s device code 5 1 3 24 678 vsk t f 200 - 12 h k p v s kuf.. + -- k1 g 1 g 2 k2 - - + v s kkf.. + -- g 2 k2 -- + v s kvf.. - ++ k1 g 1 g 2 k2 ++ -
document number: 94422 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 19-jul-10 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 9 vsk.f200..p series fast thyristor/diode an d thyristor/thyristor (magn-a-pak power modules), 200 a vishay semiconductors scr/diode common anodes n scr/diode doubler circui t, negative control l two scrs doubler circuit t scr/diode doubler circui t, positive control h links to related documents dimensions www.vishay.com/doc?95086 circuit configuration circuit description circuit configuration code circuit drawing v s knf.. - k1 g 1 ++ + + - v s klf.. g 2 k2 ~ +- +- ~ v s ktf.. +- ~ ~ +- k1 g 1 g 2 k2 v s khf.. ~ +- k1 g 1 +- ~
document number: 95086 for tec hnical questions, contact: indmodules@vishay.com www.vishay.com revision: 03-aug-07 1 magn-a-pak outline dimensions vishay semiconductors dimensions in millimeters (inches) notes ? dimensions are nominal ? full engineering drawings are available on request ? ul identification number for ga te and cathode wire: ul 1385 ? ul identification number for package: ul 94 v-0 ? 5.5 6 (0.24) 38 (1.5) 50 (1.97) 6 (0.24) 115 (4.53) 80 (3.15) 9 (0.35) 20 (0.79) 3 screws m8 x 1.25 35 (1.38) 28 (1.12) 32 (1.26) hex 13 10 (0.39) 92 (3.62) 51 (2.01) 52 (2.04)
document number: 91 000 www.vishay.com revision: 11-mar-11 1 disclaimer legal disclaimer notice vishay all product, product specifications and data ar e subject to change without notice to improve reliability, function or design or otherwise. vishay intertechnology, inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectivel y, vishay), disclaim any and all liability fo r any errors, inaccuracies or incompleteness contained in any datasheet or in any o ther disclosure relating to any product. vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. to the maximum extent permitted by applicab le law, vishay disc laims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, incl uding without limitation specia l, consequential or incidental dama ges, and (iii) any and all impl ied warranties, including warran ties of fitness for particular purpose, non-infringement and merchantability. statements regarding the suitability of pro ducts for certain types of applications are based on vishays knowledge of typical requirements that are often placed on vishay products in gene ric applications. such statements are not binding statements about the suitability of products for a partic ular application. it is the customers responsibility to validate that a particu lar product with the properties described in th e product specification is su itable for use in a particul ar application. parameters provided in datasheets an d/or specifications may vary in different applications and perfo rmance may vary over time. all operating parameters, including typical pa rameters, must be validated for each customer application by the customers technical experts. product specifications do not expand or otherwise modify vishays term s and conditions of purchase, including but not limited to the warranty expressed therein. except as expressly indicated in writing, vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the vishay product co uld result in person al injury or death. customers using or selling vishay products not expressly indicated for use in such applications do so at their own risk and agr ee to fully indemnify and hold vishay and it s distributors harmless from and against an y and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that vis hay or its distributor was negligent regarding the design or manufact ure of the part. please contact authorized vishay personnel t o obtain written terms and conditions regarding products designed fo r such applications. no license, express or implied, by estoppel or otherwise, to any intelle ctual property rights is gran ted by this document or by any conduct of vishay. product names and markings noted herein may be trademarks of their respective owners.

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